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dc.contributor.authorDONEGAN, JOHNen
dc.contributor.authorMCCABE, EITHNEen
dc.date.accessioned2010-02-11T10:25:36Z
dc.date.available2010-02-11T10:25:36Z
dc.date.issued1998en
dc.date.submitted1998en
dc.identifier.citationJordan, C.; Fewer, D. T.; Donegan, J. F.; McCabe, E. M.; Huynh, A.; Logue, F. P.; Taniguchi, S.; Hino, T.; Nakano, K.; Ishibashi, A., Defect annealing in a II-VI laser diode structure under intense optical excitation, Applied Physical Letters, 72, 2, 1998, 194 - 196en
dc.identifier.otherYen
dc.identifier.urihttp://hdl.handle.net/2262/37467
dc.descriptionPUBLISHEDen
dc.description.abstractDefect annealing under intense pulsed optical excitation has been observed in a II?VI laser diode structure at room temperature. More than one order of magnitude increase in photoluminescence intensity has been obtained when the annealed area is probed at low excitation intensity. High-resolution confocal photoluminescence images of the annealed region do not show any sign of degradation. Together, these results suggest that an initial density of intrinsic point defects present within the active region can be removed by the optical annealing. Recombination-enhanced defect reactions in the vicinity of the point defects are responsible for this nonthermal annealing effect.en
dc.format.extent194en
dc.format.extent196en
dc.format.mimetypeapplication/pdf
dc.language.isoenen
dc.relation.ispartofseriesApplied Physical Lettersen
dc.relation.ispartofseries72en
dc.relation.ispartofseries2en
dc.rightsYen
dc.subjectII-VI semiconductorsen
dc.subjectsemiconductor lasersen
dc.subjectannealingen
dc.subjectphotoluminescenceen
dc.titleDefect annealing in a II-VI laser diode structure under intense optical excitationen
dc.typeJournal Articleen
dc.type.supercollectionscholarly_publicationsen
dc.type.supercollectionrefereed_publicationsen
dc.identifier.peoplefinderurlhttp://people.tcd.ie/jdoneganen
dc.identifier.peoplefinderurlhttp://people.tcd.ie/emccabeen
dc.identifier.rssinternalid4867en
dc.identifier.doihttp://dx.doi.org/10.1063/1.120682en
dc.identifier.rssurihttp://dx.doi.org/10.1063/1.120682
dc.identifier.orcid_id0000-0002-5240-1434en


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