Linewidth enhancement factor and modulation bandwidth of lattice matched 1.5 micron InGaAsN/GaAs quantum well lasers
Citation:
Woon-Ho Seo, O'Brien, C., Donegan, J.F., Yoonseok Lee, Gil-Ho Kim., Linewidth enhancement factor and modulation bandwidth of lattice matched 1.5 micron InGaAsN/GaAs quantum well lasers, Proceedings of SPIE, Semiconductor Lasers and Laser Dynamics, Strasbourg, France, 27 April, Daan Lenstra, Geert Morthier, Thomas Erneux, Markus Pessa, 5452, SPIE, 2004, 206 - 214Download Item:
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Abstract:
The linewidth enhancement factors of lattice-matched 1.5 ?m wavelength InGaNAs/GaAs and InGaAs/InP singlequantum-
well structures have been calculated using microscopic theory including many-body effects and a 10x10
effective-mass Hamiltonian. For applications which require high gain and carrier densities, InGaNAs/GaAs quantum
wells have a much lower linewidth enhancement factor over a temperature range 300?400 K than InGaAs. The
linewidth enhancement factor of InGaNAs is almost independent of both carrier density and temperature compared with
InGaAs. The small-signal modulation characteristics of these 1.5?m lattice-matched structures and their temperature
dependence have also been calculated. It is found that the maximum bandwidth of the InGaNAs/GaAs quantum well
lasers is about 2.3 times larger than that of the InGaAs/InP quantum well lasers due to the high differential gain. The
slope efficiency for the 3dB bandwidth as a function of optical density is twice as large for InGaNAs/GaAs as for
InGaAs/InP quantum well lasers.
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Enterprise Ireland
Author's Homepage:
http://people.tcd.ie/jdoneganDescription:
PUBLISHEDStrasbourg, France
Author: DONEGAN, JOHN
Other Titles:
Proceedings of SPIESemiconductor Lasers and Laser Dynamics
Publisher:
SPIEType of material:
Conference PaperCollections:
Series/Report no:
5452Availability:
Full text availableKeywords:
InGaAsN materials, Semiconductor quantum wells, linewidth enhancement factor, small signalDOI:
http://dx.doi.org/10.1117/12.545877Licences: