Broad band infrared spectroscopy of grooved silicon
Citation:
E. Y. Krutkova, V. Y. Timoshenko, L. A. Golovan, P. K. Kashkarov, E. V. Astrova, T. S. Perova, B. P. Gorshunov, and A. A. Volkov, Broad band infrared spectroscopy of grooved silicon, Proceedings of SPIE, Opto-Ireland 2005: Optoelectronics, Photonic Devices, and Optical Networks, Dublin, Ireland, Monday 04 April 2005, John G. McInerney, Gerard Farrell, David M. Denieffe, Liam P. Barry, Harold S. Gamble, Padraig J. Hughes, Alan Moore, 5825, SPIE, 2005, 670 - 677Download Item:
Broad band.pdf (Published (publisher's copy) - Peer Reviewed) 302.6Kb
Abstract:
Grooved silicon (gr-Si) structures with a period of few micrometers, which were formed by anisotropic etching of (110)
Si wafers, have been investigated by means of broad band infrared (IR) and submillimeter transmission spectroscopy. In
the spectral region of 50-1000 ?m the results are well explained by an effective medium model, which predicts a strong
birefringence with a difference between refractive indices for ordinary and extraordinary beams to be about 0.73-0.77.
The IR transmission of gr-Si in the range from 1 to 30 ?m is strongly influenced by light scattering. The experimental
results measured in the region 1-5 ?m can be understood in the terms of the geometric optics.
Sponsor
Grant Number
Science Foundation Ireland (SFI)
Author's Homepage:
http://people.tcd.ie/perovatDescription:
PUBLISHEDDublin, Ireland
Author: PEROVA, TANIA
Other Titles:
Proceedings of SPIEOpto-Ireland 2005: Optoelectronics, Photonic Devices, and Optical Networks
Publisher:
SPIEType of material:
PosterSeries/Report no:
5825Availability:
Full text availableDOI:
http://dx.doi.org/10.1117/12.619463Licences: