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dc.contributor.authorMOORE, ROBERTen
dc.contributor.authorPEROVA, TANIAen
dc.date.accessioned2010-02-01T12:58:29Z
dc.date.available2010-02-01T12:58:29Z
dc.date.created24-27 June 2004en
dc.date.issued2004en
dc.date.submitted2004en
dc.identifier.citationJ. McCarthy, S. Bhattacharya, T.S. Perova, R.A. Moore, H. Gamble, and B. M. Armstrong, Composition and Stress Analysis in Si/SiGe Structures, Proceedings of IEEE 1st International Conference, Acapulko, Mexico, 24-27 June 2004, IEEE, 2004, 226 - 230en
dc.identifier.otherYen
dc.identifier.urihttp://hdl.handle.net/2262/36666
dc.descriptionPUBLISHEDen
dc.descriptionISBN 0-7803-8532-2en
dc.descriptionAcapulko, Mexicoen
dc.description.abstractStrained Si tecbnology enables improvements in CMOS performance and functionality via replacement of the bulk, cubic-crystal Si substrate witb a Si substrate that contains a tetragonally distorted, biaxially strained Si thin f h at the surface. Here we use micro-Raman spectroscopy to enable us to characterise growth processes of strained silicon, and to characterise the resulting level of strainlstress in the silicon and the effect it has on the underlying layer of graded SiGe.en
dc.format.extent226 - 230en
dc.format.mimetypeapplication/pdf
dc.language.isoenen
dc.publisherIEEEen
dc.rightsYen
dc.subjectElectronic & Electrical Engineering
dc.titleComposition and Stress Analysis in Si/SiGe Structuresen
dc.title.alternativeProceedings of IEEE 1st International Conferenceen
dc.typeConference Paperen
dc.contributor.sponsorHigher Education Authority (HEA)en
dc.type.supercollectionscholarly_publicationsen
dc.type.supercollectionrefereed_publicationsen
dc.identifier.peoplefinderurlhttp://people.tcd.ie/rmooreen
dc.identifier.peoplefinderurlhttp://people.tcd.ie/perovaten
dc.identifier.rssinternalid14122en
dc.identifier.doihttp://dx.doi.org/10.1109/ICEEE.2004.1433882en
dc.identifier.rssurihttp://dx.doi.org/10.1109/ICEEE.2004.1433882


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