Tunnel magnetoresistance of disordered low-moment Co2MnSi Heusler alloy films
Citation:K. Nakajima, G. Fen, C. Caillol, . S. Dorneles, M. Venkatesan and J.M.D.Coey 'Tunnel magnetoresistance of disordered low-moment Co2MnSi Heusler alloy films' in Journal of Applied Physics, 97, (10), 2005, 10C904
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Thin films of Co(1?x?y)MnxSiy (x = 0.18?0.26 and y = 0.23?0.29) were deposited from elemental targets onto thermal-oxidized Si substrates at room temperature using dc magnetron cosputtering. The as-deposited films appear to be amorphous showing no distinguishable peaks in x-ray diffraction, and the magnetic moment at room temperature is nearly zero. Despite of its low magnetic moment (less than 0.001?B per formula), the disordered Heusler magnetic tunnel junctions show tunnel magnetoresistance ratios as large as 10% at room temperature. The dependence of the tunnel magnetoresistance ratio on compositions x and y is also reported.
Science Foundation Ireland
Publisher:American Institute of Physics
Series/Report no:Journal of Applied Physics
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