Spin scattering in ferromagnetic thin films
Citation:M Viret, D Vignoles, D Cole, J M D Coey, W Alllen, D S Daniel, J F Gregg 'Spin scattering in ferromagnetic thin films' in Physical Review B, 53, (13), 1996, pp 8464 - 8468
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By combining parallel and transverse magnetoresistance measurements on thin films of Co and Ni, the contribution of spin scattering at the domain walls is separated from the anisotropic magnetoresistance (AMR). A model, based on the Larmor-precession-induced deviation of the conduction electron spin direction during domain-wall traversal is developed. By using a scattering probability which varies with the cosine of the angle between the carrier spin and the local exchange field (as used for giant magnetoresistance systems) it is possible to account for the amplitude of the measured magnetoresistive effect.
Author: COEY, JOHN MICHAEL DAVID
Publisher:American Physical Society
Series/Report no:Physical Review B
Availability:Full text available