Show simple item record

dc.contributor.authorFENG, GEN
dc.contributor.authorVAN, DIJKEN SEBASTIAN
dc.contributor.authorCOEY, JOHN MICHAEL DAVID
dc.date.accessioned2009-08-11T14:17:16Z
dc.date.available2009-08-11T14:17:16Z
dc.date.issued2009
dc.date.submitted2009en
dc.identifier.citationFeng, G., Van Dijken, S., Coey, J.M.D. 'MgO-based double barrier magnetic tunnel junctions with thin free layers' Journal of Applied Physics, 105, (7), 2009, art. no. 07C926en
dc.identifier.otherYen
dc.identifier.otherY
dc.identifier.urihttp://hdl.handle.net/2262/31629
dc.descriptionPUBLISHEDen
dc.description.abstractThe free layer thickness (tfree) in double barrier magnetic tunnel junctions (DMTJs) based on crystalline MgO barriers and CoFeB ferromagnetic layers has been varied from 0.5 to 3.0 nm in order to investigate its effect on the magnetic and electrical properties. One obvious feature of DMTJs with tfree<=1 nm is the absence of sharp free layer switching in the TMR curves, which can be explained by the superparamagnetic nature of discontinuous CoFeB layer, which breaks into nanodots when it is very thin. Normal free layer switch is observed when tfree=2.0 and 3.0 nm. Another difference is a rapid increase in junction resistance and tunnel magnetoresistance at low temperature for DMTJs with thin tfree, which is attributed to the Coulomb blockade effect. We also observed a small conductance peak in the dI/dV curve at low bias only in the parallel configuration and at temperatures below 100 K. This is related to the Kondo scattering process on the nanodots, which constitutes the discontinuous free layer. We found no Coulomb staircase existing in the I-V curves; this may be due to the microsize of the junctions.en
dc.description.sponsorshipThis work was supported by Science Foundation Ireland as part of the CINSE and MANSE projects, and the European BIOMAGSENS project. We are grateful to H. C. Wu for the AGFM measurement.en
dc.format.extentart. no. 07C926en
dc.format.extent391250 bytes
dc.format.mimetypeapplication/pdf
dc.language.isoenen
dc.publisherAmerican Institute of Physicsen
dc.relation.ispartofseriesJournal of Applied Physicsen
dc.relation.ispartofseries105en
dc.relation.ispartofseries7en
dc.rightsYen
dc.subjectPhysicsen
dc.titleMgO-based double barrier magnetic tunnel junctions with thin free layersen
dc.contributor.sponsorScience Foundation Ireland
dc.type.supercollectionscholarly_publicationsen
dc.type.supercollectionrefereed_publicationsen
dc.identifier.peoplefinderurlhttp://people.tcd.ie/jcoey


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record