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dc.contributor.authorPEROVA, TANIA
dc.date.accessioned2009-04-21T11:56:19Z
dc.date.available2009-04-21T11:56:19Z
dc.date.issued2009
dc.date.submitted2009en
dc.identifier.citationS. Sriram, M. Bhaskaran, T. S. Perova, V. Melnikov, G. J. Thorogood, K. T. Short, and A. S. Holland `In situ investigation of thermally influenced phase transformations in (pb0.92sr0.08) (zr0.65ti0.35)o3 thin films using micro-raman spectroscopy and x-ray diffraction? in IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control , 56, (2), 2009, pp 241 ? 245en
dc.identifier.otherY
dc.identifier.otherYen
dc.identifier.urihttp://hdl.handle.net/2262/29386
dc.descriptionPUBLISHEDen
dc.description.abstractThin films of ferroelectric strontium-doped lead zirconate titanate [PSZT, (Pb0.92Sr0.08)(Zr0.65Ti0.35)O3] deposited by RF magnetron sputtering have been analyzed by in situ analysis techniques. The in situ techniques employed for this study include micro-Raman spectroscopy and X-ray diffraction (XRD), and variations in thin film structure and orientations for temperatures up to 350degC and 750degC for the respective techniques have been studied. The samples analyzed were PSZT thin films deposited on platinum-coated silicon substrates at either room temperature or at 750degC. In situ measurements using micro-Raman spectroscopy and XRD techniques have been used to identify the Curie point for poly-crystalline PSZT thin films and to determine the temperature-activating significant grain growth for room-temperature-deposited PSZT thin films. To study the presence of hysteresis, analysis was carried out during both temperature ramp-up and ramp-down cycles. Raman measurements showed expected bands (albeit weak), and the in situ measurements have detected variations in the crystal structure of the thin film samples, with negligible variations between the heating and cooling cycles. A combination of the Raman and XRD results has shown that the temperature activating significant grain growth for the room-temperature deposited films is about 275degC and the Curie point lies between 325 and 400degC. This relatively high Curie point makes these films suitable for wide temperature range applications.en
dc.format.extent241en
dc.format.extent245en
dc.format.extent402144 bytes
dc.format.mimetypeapplication/pdf
dc.language.isoenen
dc.publisherIEEEen
dc.relation.ispartofseriesIEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Controlen
dc.relation.ispartofseries56en
dc.relation.ispartofseries2en
dc.rightsYen
dc.subjectElectronic & Electrical Engineeringen
dc.titleIn situ investigation of thermally influenced phase transformations in (pb0.92sr0.08) (zr0.65ti0.35)o3 thin films using micro-raman spectroscopy and x-ray diffractionen
dc.typeJournal Articleen
dc.type.supercollectionscholarly_publicationsen
dc.type.supercollectionrefereed_publicationsen
dc.identifier.peoplefinderurlhttp://people.tcd.ie/perovat
dc.identifier.rssurihttp://dx.doi.org/10.1109/TUFFC.2009.1032


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