Tip-enhanced secondary emission of a semiconductor quantum dot
Item Type:Journal Article
Citation:Rukhlenko, I. D. and Fedorov, A. V. and Baranov, A. V. and Perova, T. S. and Berwick, K. 'Tip-enhanced secondary emission of a semiconductor quantum dot'. Physical Review B, 77, (4), 2008, pp. 045331/1 ? 045331/10.
PRB_76_045332.pdf (publisher pdf) 186.6Kb
The interaction between interface plasmons within a doped substrate and quantum dot electrons or holes has been theoretically studied in double heterostructures based on covalent semiconductors. The interface plasmon modes, the corresponding dispersion relationship, and the intraband carrier relaxation rate in quantum dots are reported. We find the critical points in the interface plasmon density of states for multilayered structures results in enhanced quantum dot intraband carrier relaxation when compared to that for a single heterostructure. A detailed discussion is made of the relaxation rate and the spectral position dependencies on the quantum dot layer thickness as well as on the dopant concentration. The material system considered was a p-Si/SiO2 / air heterostructure with Ge quantum dots embedded in an SiO2 layer. This structure is typical of those used in technical applications.
Publisher:American Institute of Physics
Type of material:Journal Article
Series/Report no:Physical Review B
Availability:Full text available